• ATURAN PERKULIAHAN ELEKTRONIKA DASAR
  • Pertemuan 1
  • Disusun oleh: Agustian Noor




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    BAHAN AJAR





    Disusun oleh: Agustian Noor



    TEKNIK INFORMATIKA POLITEKNIK NEGERI TANAH LAUT

    2016

    SATUAN ACARA PERKULIAHAN MATA KULIAH ELEKTRONIKA DASAR KODE / SKS : MTK224 / 2 SKS



    Dosen Pengasuh : Agustian Noor

    NIK : 160201153



    Program Studi : Teknik Informatika Kelas/angkatan : Teknik Informatika/2016


    Minggu ke

    Pokok Bahasan

    Sub Pokok Bahasan

    Tujuan Instruksional Khusus

    Ref.

    1

    Tingkat Energi Pada Zat Padat


    Transport Sistem Pada Semikonduktor

    Pengantar

    Energi Atom

    Prinsip Dasar Pada Zat Padat


    Prinsip Semikonduktor



    Muatan Partikel Intensitas, Tegangan dan Energi
    Satuan eV untuk Energi
    Tingkat Energi Atom

    Struktur Elektronik dari Element
    Mobilitas dan Konduktivitas Elektron dan Holes
    Donor dan Aseptor Kerapatan Muatan Sifat Elektrik

    1,2

    2

    Karakteristik Dioda

    Prinsip Dasar

    Rangkaian terbuka p-n Junction Penyerarah pada p- n Junction

    3

    Karakterisrik Dioda

    Sifat Dioda

    Sifat Volt-Ampere Sifat ketergantungan Temperatur Tahanan Dioda Kapaitas




    4

    Karakteristik Dioda

    Jenis Dioda

    Switching Times Breakdown Dioda Tunnel Dioda Semiconductor Photovoltaic Effect Light Emitting Diodes




    5

    Rangkaian Dioda

    Dasar

    Dioda sebagai elemen rangkaian Prinsip garis beban Model dioda Clipping

    1

    6

    Rangkaian Dioda

    Lanjut

    Comparator Sampling gate Penyearah Penyearah gelombang penuh Rangkaian lainnya

    MID TEST/UTS




    7

    Rangkaian Transistor

    Sifat Transistor

    Transistor Junction Komponen Transistor Transistor Sebagai Penguat (Amplifier) Konstruksi Transistor

    8

    Rangkaian Transistor

    Sifat Transistor

    Konfigurasi Common Base Konfigurasi Common Emitor CE Cutoff

    CE Saturasi

    CE Current Gain Konfigurasi Common Kolektor


    9

    Rangkaian Transistor

    Transistor Pada Frekuensi Rendah

    Analisis Grafik Konfigurasi CE Model Two Port Device

    Model Hybrid Parameter h







    10

    Rangkaian Transistor

    Transistor Pada Frekuensi Rendah

    Thevenin & Norton Emitter Follower Membandingkan Konfigurasi Amplifier

    Teori Miller

    1

    11

    Rangkaian Transistor Field Effect Transistor

    Transistor Pada frekuensi Tinggi
    Sifat Dasar

    Rangkaian Dasar



    Model Hybrid
    JFET

    Karakteristik Volt Amper


    FET MOSFET

    Voltager Variable Resitor



    12-14

    Studi Kasus

    Penerapan Transistor

    Sebagai Osilator Sebagai Penguat Sebagai Sensor

    FINAL TEST

    Buku Acuan :



    1. Chattopadhyay, D. dkk, Dasar Elektronika,

    Penerbit Universitas Indonesia, Jakarta:1989.

    1. Millman, Halkias, Integrated Electronics, Mc Graw Hill, Tokyo, 1988

    2. http://WWW.id.wikipedia.org

    3. http://www.tpub.com/content/

    4. http://www.electroniclab.com/


    Palembang, 7 Feb 2007 Dosen Pengampu,


    Ahmad Fali Oklilas, MT NIP. 132231465
    ATURAN PERKULIAHAN ELEKTRONIKA DASAR

    DAFTAR HADIR MIN = 80% X 16= 14 KOMPONEN NILAI



    TUGAS/QUIS = 25%

    UTS = 30%

    UAS = 45%
    Nilai Mutlak 86 – 100 = A

    71 – 85 = B

    56 – 70 = C

    41 – 55 = D

    40 = E



    Keterlambatan kehadiran dengan toleransi 15 menit Buku Acuan :

      1. Chattopadhyay, D. dkk, Dasar Elektronika,

    Penerbit Universitas Indonesia, Jakarta:1989.

      1. Millman, Halkias, Integrated Electronics, Mc Graw Hill, Tokyo, 1988

      2. http://WWW.id.wikipedia.org

      3. http://www.tpub.com/content/

      4. http://www.electroniclab.com/
    Pertemuan 1
    Tingkat Energi Pada Zat Padat


    Electron’s Energy Level

    The NEUTRON is a neutral particle in that it has no electrical charge. The mass of the neutron is approximately equal to that of the proton.



    An ELECTRON’S ENERGY LEVEL is the amount of energy required by an electron to stay in orbit. Just by the electron’s motion alone, it has kinetic energy. The electron’s position in reference to the nucleus gives it potential energy. An energy balance keeps the electron in orbit and as it gains or loses energy, it assumes an orbit further from or closer to the center of the atom.

    SHELLS and SUBSHELLS are the orbits of the electrons in an atom. Each shell can contain a maximum number of electrons, which can be determined by the formula 2n 2. Shells are lettered K through Q, starting with K, which is the closest to the nucleus. The shell can also be split into four subshells labeled s, p, d, and f, which can contain 2, 6, 10, and 14 electrons, respectively.





    VALENCE is the ability of an atom to combine with other atoms. The valence of an atom is determined by the number of electrons in the atom’s outermost shell. This shell is referred to as the VALENCE SHELL. The electrons in the outermost shell are called VALENCE ELECTRONS.

    IONIZATION is the process by which an atom loses or gains electrons. An atom that loses some of its electrons in the process becomes positively charged and is called a POSITIVE ION. An atom that has an excess number of electrons is negatively charged and is called a NEGATIVE ION.

    ENERGY BANDS are groups of energy levels that result from the close proximity of atoms in a solid. The three most important energy bands are the CONDUCTION BAND, FORBIDDEN BAND, and VALENCE BAND.

    Electrons and holes in semiconductors

    As pointed out before, semiconductors distinguish themselves from metals and insulators by the fact that they contain an "almost-empty" conduction band and an "almost-full" valence band. This also means that we will have to deal with the transport of carriers in both bands.

    To facilitate the discussion of the transport in the "almost-full" valence band we will introduce the concept of holes in a semiconductor. It is important for the reader to understand that one could deal with only electrons (since these are the only real particles available in a semiconductor) if one is willing to keep track of all the electrons in the "almost-full" valence band.

    The concepts of holes is introduced based on the notion that it is a whole lot easier to keep track of the missing particles in an "almost-full" band, rather than keeping track of the actual electrons in that band. We will now first explain the concept of a hole and then point out how the hole concept simplifies the analysis.

    Holes are missing electrons. They behave as particles with the same properties as the electrons would have occupying the same states except that they carry a positive charge. This definition is illustrated further with the figure below which presents

    the simplified energy band diagram in the presence of an electric field.



    band1.gif
    Fig.2.2.12 Energy band diagram in the presence of a uniform electric field. Shown are electrons (red circles) which move against the field and holes (blue circles) which move in the direction of the applied field.

    A uniform electric field is assumed which causes a constant gradient of the conduction and valence band edges as well as a constant gradient of the vacuum level. The gradient of the vacuum level requires some further explaination since the vacuum level is associated with the potential energy of the electrons outside the semiconductor. However the gradient of the vacuum level represents the electric field within the semiconductor.

    The electrons in the conduction band are negatively charged particles which therefore move in a direction which opposes the direction of the field. Electrons therefore move down hill in the conduction band. Electrons in the valence band also move in the same direction. The total current due to the electrons in the valence band can therefore be written as:

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