FOYDALANILGAN ADABIYOTLAR




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БМИ Дониер (Lotincha) охирги

FOYDALANILGAN ADABIYOTLAR



    1. Vaxidov A.X “Avtomatikaning texnik vositalari ” Toshkent-2012.

  1. 2. Salimov J.S “Datchiklar” Toshkent-2010.

    1. Yunusov M.S “Elektron asboblar ” Toshkent-2003

    2. IC-Prog dasturining ma’lumotnomasi.

    3. IC-Prog programmatorining texnik ma’lumotnomasi.

  1. Mansoor M., Haneef I., Akhtar S., De Luca A., Udrea F. Silicon diode temperature sensors - A review of applications // Sensors and Actuators A: Physical. 232, 63-74 (2015).

  2. Kimura M., Toshima K. Thermistor-like pn junction temperature-sensor with variable sensitivity and its combination with a micro-air-bridge heater // Sensors and Actuators A: Physical. 108 (1-3), 239-243 (2003).

  3. Bakhadyrkhanov M.K., Valiev S.A., Tachilin S.A., Nasriddinov S.S. Sensitive thermosensors on the basis of highly compensated silicon // Surface Engineering and Applied Electrochemistry. 43 (6), 505-507 (2007).

  4. Karimov M., Makhkamov Sh., Makhmudov Sh.A., Muminov R.A., Rakhmatov A.Z., Sandler L.S., Sattiev A.R., Sulaimanov A.A., Tursunov N.A. Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons // Applied Solar Energy. 46 (4), 298-300 (2010).

  5. Udrea F., Santra S., Gardner J.W. CMOS temperature sensors-concepts, state-of-the-art and prospects // In: Proceedings of International Semiconductor Conference (Sinaia, Romania, 13-15 October, 2008). PP. 31-40.

  6. Karimov A.V., Yodgorova D.M., Abdulhaev O.A., Kamanov B.M., Turaev A.A. Features of the temperature properties of a field-effect transistor in a current-limiting mode // Journal of Engineering Physics and Thermophysics. 86 (1), 248-254 (2013).

  7. Karimov A.V., Dzhuraev D.R., Kuliev Sh.M., Turaev A.A. Distinctive features of the temperature sensitivity of a transistor structure in a bipolar mode of measurement // Journal of Engineering Physics and Thermophysics. 89 (2), 514-517 (2016).

  8. Souri K., Chae Y., Makinwa K.A.A. A CMOS temperature sensor with a voltage-calibrated inaccuracy of 0.15oC (3σ) From 55oC to 125oC // IEEE Journal of Solid-State Circuits. 48 (1), 292-301 (2013).

  9. Abdulkhaev O.A., Bebitov R.R., Abdulkhaeva A.R., Yodgorova D.M. Limiting of temperature measurement accuracy of semiconductor sensors depending on regulation factor of current source // Uzbek Journal of Physics. 20 (5) 300-304 (2018).

    1. http://www.ic-prog.com

    2. http://www.labcenter.co.uk

    3. http://www.microchip.ru

    4. http://www.microchip.com

    5. Proteus_Help elektron ma’lumotnoma.

    6. http://www.datasheet.com internet sahifasi.

    7. http://www.sxema.ru internet sahifasi.

    8. http://www.radiolocman.ru internet sahifasi.

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