MATHEMATICAL MODELING OF SHUBNIKOV-DE HAAS OSCILLATIONS IN NARROW-GAP




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MATHEMATICAL MODELING OF SHUBNIKOV-DE HAAS OSCILLATIONS IN NARROW-GAP 
SEMICONDUCTORS UNDER THE INFLUENCE OF TEMPERATURE AND ABSORPTION OF 
MICROWAVE RADIATION
 
R.G.Rakhimov 
Namangan Institute of Engineering and Technology 
 
Annotation. In recent years, much attention has been paid to the definition and study of 
quantum oscillation phenomena under the influence of temperature, a strong electromagnetic 
field, and deformation in bulk and low-dimensional semiconductors. With the help of such 
phenomena, it is possible to determine some basic physical quantities (the effective masses of 
charge carriers, magnetoresistance, magnetic susceptibility, etc.) and study the band energy spectra 
of electrons in new semiconductor materials. Shubnikov-de Haas, de Haas-van Alphen oscillations 
and the quantum Hall effect were discovered at ultralow temperatures and superstrong magnetic 
fields. In this case, oscillation phenomena were observed in bulk semiconductors and metals.
Keywords: semiconductor, electron gas, oscillation, microwave, Landau levels, electric field, 
mathematical model, Shubnikov-de Haas oscillations. 
At present, interest has increased in Shubnikov-de Haas oscillations in semiconductors during 
the absorption of microwave radiation. In particular, Shubnikov-de Haas oscillations in HgSe 
samples with different concentrations of Fe impurities at low temperatures and strong microwave 
fields were considered in work[1]. In this work, the dependence of oscillations on the derivative of 
the absorption power P with respect to the magnetic field strength 
dP
H
dH






on the reverse magnetic 
field 
1
H
was observed in narrow-gap semiconductors at various impurity concentrations. 
As is known, all quantum oscillation phenomena strongly depend on the spectral density of 
states in semiconductors. In works [2-6], the temperature dependence of the spectral density of 
states in narrow-gap semiconductors in quantizing magnetic fields was studied. However, these 



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MATHEMATICAL MODELING OF SHUBNIKOV-DE HAAS OSCILLATIONS IN NARROW-GAP

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