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MATHEMATICAL MODELING OF SHUBNIKOV-DE HAAS OSCILLATIONS IN NARROW-GAP Pdf ko'rish
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bet | 243/693 | Sana | 13.05.2024 | Hajmi | 15,56 Mb. | | #228860 |
Bog'liq ТўпламMATHEMATICAL MODELING OF SHUBNIKOV-DE HAAS OSCILLATIONS IN NARROW-GAP
SEMICONDUCTORS UNDER THE INFLUENCE OF TEMPERATURE AND ABSORPTION OF
MICROWAVE RADIATION
R.G.Rakhimov
Namangan Institute of Engineering and Technology
Annotation. In recent years, much attention has been paid to the definition and study of
quantum oscillation phenomena under the influence of temperature, a strong electromagnetic
field, and deformation in bulk and low-dimensional semiconductors. With the help of such
phenomena, it is possible to determine some basic physical quantities (the effective masses of
charge carriers, magnetoresistance, magnetic susceptibility, etc.) and study the band energy spectra
of electrons in new semiconductor materials. Shubnikov-de Haas, de Haas-van Alphen oscillations
and the quantum Hall effect were discovered at ultralow temperatures and superstrong magnetic
fields. In this case, oscillation phenomena were observed in bulk semiconductors and metals.
Keywords: semiconductor, electron gas, oscillation, microwave, Landau levels, electric field,
mathematical model, Shubnikov-de Haas oscillations.
At present, interest has increased in Shubnikov-de Haas oscillations in semiconductors during
the absorption of microwave radiation. In particular, Shubnikov-de Haas oscillations in HgSe
samples with different concentrations of Fe impurities at low temperatures and strong microwave
fields were considered in work[1]. In this work, the dependence of oscillations on the derivative of
the absorption power P with respect to the magnetic field strength
dP
H
dH
on the reverse magnetic
field
1
H
was observed in narrow-gap semiconductors at various impurity concentrations.
As is known, all quantum oscillation phenomena strongly depend on the spectral density of
states in semiconductors. In works [2-6], the temperature dependence of the spectral density of
states in narrow-gap semiconductors in quantizing magnetic fields was studied. However, these
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