Namangan Institute of Engineering and Technology
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21
1
20
1
1.5114
–0.776
0.064
–
+0.24(5) or
+5.8(+24,–13)
–
0.15
2.11
31
1
20
1
1.5897
–5.316
0.008
–
+0.9(5)
–9.0
–4.15
31
1
40
1
1.4167
5.538
0.007
–
+1.5(5)
9.68
6.75
20
3
20
1
1.5235
5.213
–0.081
–
0.83(+10,–15) or
–3.4(+8,–11)
–
0.82
–
20
3
32
1
0.5414
–1.676
–0.001
–
+0.06(5) or
–4.3(+12,–29)
8.4
–
References
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2.
Usmanov P. N., Vdovin A. I., Yusupov E. K., Salikhbaev U. S., // Phys. Part. Nucl. Letters.
2019. V. 16. № 6. P. 706.
3.
Nica N. // Nucl. Data Sheets. 2017. V. 141. P. 1.
4.
Reich C. W. // Nucl. Data Sheets. 2005. V. 105. P. 557.
5.
Govor L. I., Demidov A. M., Mikhailov I. V. // Phys. At. Nucl. 2001. V. 64.
№ 7. Р. 1254.
6.
Govor L. I., Demidov A. M., Kurkin V. A., Mikhailov I. V. // Phys. At. Nucl. 2009. V. 72
. № 11.
Р. 1799.
7.
Lesher S. R.,
Casarella C., Aprahamian A. et al. // Phys. Rev. C. 2017. V. 95. 064309.
SPECTRAL CHARACTERISTICS OF THE ABSORPTION COEFFICIENT AND ENERGY POSITION
OF DEFECTS
R.G.Ikramov, M.A.Nuriddinova, Kh.A.Muminov, D.M.Mukimjonov
Namangan Institute of Engineering and Technology
E-mail:
xamuminov@mail.ru
Abstract: In this manuscript, we theoretically obtained the defeсtiv absorption spectra of
hydrogenated amorphous silicon. It is showing that the values of these spectra are determined by
the density distribution of electronic states localized band in the allowed bands. It was also shown
that from the experimental data of the defect absorption, the energy positions of the defects can
be determined by spectra.
Keywords: hydrogenated amorphous silicon, density distribution
of electron states of
defects, density distribution of electronic states in the allowed bands, Kubo-Greenfood formula,
Davis-Mott
approximation, optical transitions between
defects and the allowed bands,
defect
absorption spectra, energy position of defects.
The experimental results of the spectral characteristics of the defect absorption coefficient in
films of pseudo-doped amorphous hydrogenated silicon
(a-Si: H) are shown in Figure 1. As is known,
optical transitions of electrons participating in defects are of three types: between defects,
between defects and tails of allowed zones, between defects and allowed zones. The main role in
them is played
by the absorption coefficient, determined by transitions between defects and
allowed zones [1]. It follows from this that the spectral characteristics of the absorption coefficient
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depend on the energy position of the defects, on the distribution of the density of electronic states
in the defects and allowed zones. The spectral characteristics of the defect absorption coefficient
of amorphous semiconductors are determined by the Davis-Mott approximation method from the
Kubo-Greenwood formula as follows [2].
Fig.1. Experimental results of the spectral characteristics of the defect absorption
