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coefficient of pseudo-doped samples (b), exponential absorption (a),Eg
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| bet | 273/693 | | Sana | 13.05.2024 | | Hajmi | 15,56 Mb. | | #228860 |
Bog'liq Тўпламcoefficient of pseudo-doped samples (b), exponential absorption (a),Eg
=1,8 эВ.
0
0
)
(
)
(
~
)
(
d
g
g
. (1)
Where ε
0
- the highest energy position of electrons involved in optical transitions g(ε) - and
g(ε+ћω) - the initial and final density of states of electrons participating in optical transitions. In
[3], it was shown that when calculating the spectral characteristics of the optical absorption
coefficient in amorphous semiconductors, the distribution of the density of electronic states in
defects can be chosen as Gaussian or hyperbolic secant, and for the distribution of the density of
electronic states at the boundaries of the allowed bands in the form of a power or Gaussian [4 ].
The energy dependence of the densities of defective states in the Gaussian distribution is
as follows
2
exp
D
D
a
g
g
. (2)
when g(ε
D
)– s the maximum value of the density distribution of electron states in defects and
εD, the energy position of this maximum, and is the parameter that determines the effective half-
width of the Gauss distribution.
The density distribution of electron states in the form of a hyperbolic secant is recorded as
follows:
))
(
exp(
))
(
exp(
)
(
2
))
(
(
)
(
)
(
D
D
D
D
D
b
b
g
b
ch
g
g
.
(3)
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