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“Физика ва электрониканинг долзарб муаммолари”Bog'liq 1 ТДТУ 2023 01 10 2023“Физика ва электрониканинг долзарб муаммолари”
мавзусидаги Республика илмий-амалий анжумани
Тошкент, 2023 йил, 3-4 ноябрь
27
Таким образом впервые методом имплантации ионов Ni
+
в Si с энергией 15-30 кэВ в
сочетании с прогревом в приповерхностной области Si получены наноразмерные структуры
NiSi
2
. Ширина запрещенной зоны нанокристалических фаз с ростом их диаметра от 5 нм до
35 нм изменялась в пределах от ~1,05 до 0,6 эВ. При дозе D ≈ 8∙10
16
см
-2
образуется
нанопленочная система типа Si/NiSi
2
/Si. Показано, что E
g
нанослоев NiSi
2
равна ~ 0,57 eV.
ЛИТЕРАТУРA
1. В.Л.Дубов, Д.В.Фомин // Успехи прикладной физики, 2016, том 4.
2. A.K.Tashatova, N.M.Mustafoyeva // Journal of Surface Investigation: X-ray, Synchrotron and
Neutron Techniques, 2020, Vol. 14, No. 1, pp.81–84. DOI: 10.1134/S1027451020010188
TECHNOLOGY FOR OBTAINING HYBRID STRUCTURES OF Fe-SiO
2
-p(n)-Si
Mn>
E.U.Arzikulov, A.D.Nurimov, S.Q.Axrorov, M.Radjabova, S.Q.Eshmamatov
Samarkand Quantum Centre
It has been shown that the properties of MOS HS are mainly determined by the thickness
of the metal and oxide layers that provide tunneling of carriers through them. At the same time, it
was found that the optimal thickness of the oxide layer is up to 5 nm, and the metal layer is 15 nm
[1, 2]. The growth of an oxide layer with a thickness of about 5 nm on the surface of diffusion-
doped samples of n(p)-Si was carried out according to the method described in the ref.
[1, 7]. Then, layers of pure iron were obtained on the surface of purified and dried C, HC and OC
samples of p(n)-Si by thermal or electron beam evaporation in high vacuum [3]. The
surface characteristics of the HS deposited by a thin layer of Fe were re-investigated using AFM
in the static force mode.
The surface of the Fe film has the shape of hills and valleys (See Fig.1.). The average
roughness of the substrate decreased from -41 fm to -19 fm as a thin layer of Fe was deposited. At
the same time, the average roughness increased from 1.5 nm to 26.4 nm.
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