Namangan Institute of Engineering and Technology
nammti.uz
10.25.2023
Pg.206
during ion synthesis can occur as a result of the interaction of implanted atoms with target atoms
or as a result of their interaction with each other. The use of ion-electron synthesis to create
structures based on silicon has undoubted advantages over other methods, since this method is
compatible with existing silicon technology.
Keywords. Regularities in the formation of the spatial distribution of nitrogen atoms, defect
formation, investigation of silicon under high-temperature conditions, mechanism of nucleation and
growth of the silicon nitride phase, thermionic synthesis of silicon, thin silicon upon implantation of
large doses of hydrogen ions.
Introduction. The formation of a new phase in electron and ion synthesis can occur as a result
of the interaction of implanted atoms with target atoms or their interaction with each other. The
use of electrons under the influence of temperature to create structures based on silicon has clear
advantages over other methods, since this method is compatible with existing silicon technology.
