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Namangan Institute of Engineering and Technology
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Bog'liq ТўпламNamangan Institute of Engineering and Technology
nammti.uz
10.25.2023
Pg.207
nucleation of the silicon nitride phase in single-crystal silicon are studied in detail. The conditions
for high-temperature ion implantation were met. The mechanism of nucleation of the Si
3
N
4
phase
of secondary structural defects in single-crystal silicon has been established. The nature of the
difference between the theoretically predicted and experimentally observed spatial distribution of
implanted nitrogen atoms and the synthesized phase of silicon nitride under the conditions of ion-
electron synthesis is determined.
Based on their research, they are developed at the level of inventions and tested under the
conditions of production of an ion-modified embedded dielectric silicon insulator structure. A
method has been proposed and implemented for creating intermediate germanium Si/SiO
2
epitaxial
layers, which makes it possible to create silicon-germanium dielectric structures.
The liquid-phase solubility of N in Si has a higher binding energy than the formation energy of
this Si-SiO
2
bond. Oxygen atoms also have a much higher solubility in silicon. This means that under
conditions of electron irradiation, when the low temperature reaches 500–700
℃
and higher, the
formation of Si/SiO
2
bonds can occur as the dose increases.
When the observed glass concentration is reached, the subsequent formation of Si/SiO
2
bonds in the mobile region stops, and dispersion of excess oxygen atoms with a high diffusion
coefficient in SiO
2
from the diffusion zone also occurs in the glass. It is in the region of the edges of
the maximum distribution of ions that new Si-SiO
2
bonds are formed. Unlike oxygen atoms,
nitrogen atoms are slightly soluble in silicon (their equilibrium solubility is 3 times less than that of
oxygen) and have a very low diffusion coefficient. The spatial distribution of nitrogen atoms in silicon
during the deposition of high-temperature ions and the kinetics of nitrogen accumulation in silicon
are studied from the point of view of its interaction with competing deposits in the crystalline
matrix.
Conclusion. Аt all implantation and flash temperatures, nitrogen is not redistributed to a
depth exceeding the average range of ions and does not evaporate in a vacuum. The critical
temperature is enough to stop accumulation in the nitrogen-saturated layer. The sample is poured
onto the surface at a temperature of 900
℃
and above the critical temperature for the formation
of secondary defects (for example, dislocation rings and dipoles) by nitrogen ions during the
movement of an ion electron. The observed effects show that the appearance of secondary
radiation defects in silicon creates conditions for the accumulation of nitrogen atoms in the layer.
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