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Sample preparation and research methods
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| bet | 227/693 | | Sana | 13.05.2024 | | Hajmi | 15,56 Mb. | | #228860 |
Bog'liq ТўпламSample preparation and research methods. The method has ample opportunities for creating
various types of systems. In this case, the properties of electronic bond structures are determined
by the parameters of ion and electron transfer (type, dose, ion energy, ion flux density, target
temperature during migration) and subsequent thermal effects (temperature, duration, pressure).
This method allows a wide range of control of the structural properties of the synthesized
objects, their size (from a few nanometers to several micrometers) and their spatial distribution.
Until the 1980s, research on the ion synthesis of semiconductor compounds was very sensitive and
focused on new possibilities for ion implantation.
The new growth in interest in ion-electron synthesis was due to the problems of radiation
resistance of very large integrated circuits. The solution to this problem was to use silicon layers as
a substrate in insulator (SiO
2
) rather than cast silicon. The research is mainly aimed at solving
practical problems for the formation of dielectric and conductive layers with expanded silicon
content. The solution to this problem can be achieved by introducing doses of ions of chemically
active elements by ensuring the concentration of implanted atoms in silicon corresponding to the
stoichiometric composition of the synthesized compound. Therefore, the researchers were mainly
interested in the processes associated with the properties of the introduction of stoichiometric and
super stochiometric doses of oxygen, nitrogen and carbon ions into the silicon matrix. In particular,
problems have been solved that allow to determine the spatial distribution of ion energy losses
under the changing composition of the object under analysis in terms of layer depth, to take into
account the effect of long-term surface scattering of silicon ions.
Results and discussion. In the matrix of crystalline silicon, in amorphous dielectric matrices
based on silicon and near Si/SiO
2
, the main physical processes that determine the mechanisms of
nucleation and growth of a new phase in ion-electron synthesis have been established. To achieve
this goal, the following problems need to be solved. Study of the regularities of the formation of the
spatial distribution of nitrogen atoms, the formation of defects, the mechanism of nucleation and
growth of the silicon nitride phase in silicon at high temperatures, the thermal effect of silicon on
dielectric structures.
Establish the main patterns of growth of silicon and germanium nanocrystals in the main part
of silicon oxide, nitride and oxynitride films. Establishment of the mechanism of nucleation of the
crystalline phase of Ge and InSb at the Si/SiO
2
interface. In the process of research, it is necessary
to solve a number of technical and technological issues.
The main problem of semiconductor physics and technology is the development of the
physical foundations for the ion-electronic synthesis of micro- and nanostructures based on silicon,
which opens up new prospects for using silicon as a base material. The spatial distribution of
nitrogen atoms, the processes of formation of secondary defects, and the initial stage of the
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