Namangan Institute of Engineering and Technology
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[1] O’Regan, B. and Grätzel, M. (1991) A Low-Cost, High-Efficientcy Solar-Cell Based on Dye
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[3]A. Abdukarimov, I.S. Noor, O. Mamatkarimov, A.K. Arof.“Influence of charge carrier
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DEVELOPMENT OF TECHNOLOGY FOR CREATING HIGH-VOLTAGE p
0
– n
0
JUNCTIONS BASED
ON GaAs
A.M.Sultanov, A.A.Abdukarimov,
Namangan Engineering and Technology Institute,Uzbekistan,
abdullaziz.abdukarimov@mail.ru
The main problem in creating subnano- and picosecond switches based on GaAs is to obtain
layers with a given thickness of the base regions and a low dopant concentration. A study was made
of the influence of technological factors on the properties of epitaxial layers and p
0
-n
0
junctions.
The thickness of the n
0
-layer, exceeding the dimensions of the space-charge layer at zero
mixing of the p-n junction, was (30–35) µm and provided the possibility of effective separation of
electron-hole pairs created by absorbed radiation[1-2]. The control of the position of the p-n
transition, the estimation of the size of the space charge region was carried out by a method based
on the observation of the electro-optical effect in gallium arsenide during the passage of plane
polarized infrared light through the crystal.
For the efficient operation of thyristors and transistors, the thickness of the p0-part should
be as small as possible, therefore, for them manufacturing can only be used n
+
- р
0
-n
0
structures
with certain thicknesses p
0
- areas that provide high
transfer coefficient values. Defined
temperature dependence of p
0
-layer on temperature the beginning of crystallization (Fig. 1), and
coefficients segregation of fine acceptor and donor impurities the level of concentration and the
degree of compensation [3-4].
