Namangan Institute of Engineering and Technology
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In order to optimize the growth technology and the design of thyristors, the dependences of
the transfer coefficients of structures on the thickness of the low-resistance part of the p
0
-region
and on temperature were studied (Fig. 2).
It can be seen that the transfer coefficient α of transistor n
+
- p
0
- n
0
structures drops sharply
already at a thickness p
0
= 30 µm regardless of the temperature onset crystallization. At the same
time, the thickness of the high-resistanceparts hi - areas up to hi-120 µm are nothas a significant
impact on the value transmission coefficients.
Thus, the above features of obtaining lightly doped layers and p-n junctions based on them
show a real possibility of creating high-speed pulse transistors and thyristors.Optimization of the
technology for obtaining high-voltage p-n junctions based on lightly doped GaAs layers,
development of new principles for the generation and transport of charge carriers in semiconductor
structures based on materials with a high proportion of radiative recombination made it possible to
obtain high-voltage three-electrode switches with subnanosecond turn-on times.
References
1.
AlferovZh.I. Grekhov I.V., Korolkov V.I., etc. Formation of high-voltage voltage drops in
the picosecond range on gallium arsenide diodes. Letters to JTF, Vol. 13, No. 18, pp. 1089-1093.
1987.
2.
Bowers H.C. Space-charge-induced negative resistance in avalanche diodes.-IEEE Trans.
EI.Devices, v. ED. 15. 1967.
3.
E. V. Solovieva, M. G. Milvidsky, L. D. Sabanova, L. V. Berman, G. A. Kolobova, B. N.
Sharonov, and L. M. Morgulis, J. Surf. The role of impurities and defects in the formation of
properties of undoped gallium arsenide layers. In: Growth and doping of semiconductor crystals
and films. Part 11. - Novosibirsk: Science, pp. 248-252. 1977.
4.
Grekhov I.V., Smirnova I.A. Semiconductor Powerful Subnanosecond Switches with a
Long Hold Time. Letters to ZhTF, V.11.No. 15, p. 901, 1985.
