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Educational Research in Universal SciencesBog'liq 4 Educational Research in Universal Sciences ISSN 2181-3515 VOLUME 2 SPECIAL ISSUE 12 2023 01.5, kicik biznes va xususiy tadbirkorning aholini ish bilan taminlash va yangi ish o\'rinlari yaratishdagi o\'rni, Amaliyot kundaligi - 60111800, Mavzu Plezioxron ierarxiya tiimlari (pdh), Razryadlı saralash, tez saralash algoritmlari.Algoritmlar va berilganlar strukturasi, Узбекистон Республикаси2023, MAĠLIWMATNAMA, xiywaǵo Министерство высшего и среднего специального образования, Sonata, klark, 20 tema, Лекция 1, test, iyod yakuniy oxirgi, Kantrakt ShartnomaEducational Research in Universal Sciences
ISSN: 2181-3515 VOLUME 2 | SPECIAL ISSUE 12 | 2023
https://t.me/Erus_uz Multidisciplinary Scientific Journal October, 2023
118
no worse than 10
–7
Pa. The dependence of the intensity I passing through the sample
(light transmission coefficient K) on the photon energy was measured using a UV-1280
spectrophotometer, and fast electron diffraction patterns were recorded using an ЭМР
-2 device.
Disordering of the Si (111) near-surface layer leads to a decrease in the light
transmittance K in the entire studied photon energy range (h = 0.4 – 1.5 eV) (Fig. 1).
From fig. 1 shows that in the case of pure Si (111) in the region h = 0.6 – 0.9 eV, the
value of K does not noticeably change; h = 1.0 – 1.1 eV K sharply, almost linearly,
with a large steepness decreases to zero. This indicates a good single crystallinity of
the Si(111) sample. It is known that the presence of disorder at the atomic level in
crystals leads to the appearance of exponential sections in the dependence of the
absorption coefficient on (h)
2
. Ion bombardment leads to a noticeable decrease in the
absorption coefficient in the entire studied region hν, an increase in the exponential
section and, consequently, a decrease in the steepness of the linear section of the I(h)
curve (Fig. 1).
Fig. 1. Dependences of the light transmittance K on the photon energy for a
Si(111) film bombarded with Ar+ ions with Е
0
= 1 keV at doses D, см
-2
: 1 – 0; 2 –
510
15
; 3 – 510
16
.
These changes occur up to a dose of D = 510
16
cm
-2
, which corresponds to the
complete amorphization of the near-surface layer. In the case of light absorption for
the exponential region, the dependence of the absorption coefficient on the photon
energy can be estimated from the formula given in [8] for a CdSeS crystal:
α = α
0
e
− (E
g
−hν)
E
0
where E
0
is the characteristic energy, which determines the edge steepness and
provides information on fluctuations in the interatomic distances [8]. In [8], to
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