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Educational Research in Universal SciencesBog'liq 4 Educational Research in Universal Sciences ISSN 2181-3515 VOLUME 2 SPECIAL ISSUE 12 2023 01.5, kicik biznes va xususiy tadbirkorning aholini ish bilan taminlash va yangi ish o\'rinlari yaratishdagi o\'rni, Amaliyot kundaligi - 60111800, Mavzu Plezioxron ierarxiya tiimlari (pdh), Razryadlı saralash, tez saralash algoritmlari.Algoritmlar va berilganlar strukturasi, Узбекистон Республикаси2023, MAĠLIWMATNAMA, xiywaǵo Министерство высшего и среднего специального образования, Sonata, klark, 20 tema, Лекция 1, test, iyod yakuniy oxirgi, Kantrakt ShartnomaEducational Research in Universal Sciences
ISSN: 2181-3515 VOLUME 2 | SPECIAL ISSUE 12 | 2023
https://t.me/Erus_uz Multidisciplinary Scientific Journal October, 2023
119
determine the value of Е
0
, the dependence K(h) was constructed and those sections
were selected where these dependences become linear, and the value of Е0 was
determined by the reciprocal of the steepness of the linear sections.
Taking into account the fact that for single-crystal and amorphous Si films, the
light reflection coefficients in the study area h differ little from each other and its
value does not exceed 4–6%, it can be assumed that for these films, the dependences
К(h) and (h) are inversely proportional. Therefore, the degree of surface disorder
can be estimated from the steepness of the linear sections of the curves K(h). In this
case, in contrast to K(h), the slopes of the curves K(h) are defined relative to the
axis K = 100%. It can be seen that with an increase in the dose of ions, the value of ,
respectively, the steepness of the curves tg decreases, and the value increases, which
leads to an increase in light absorption and a decrease in the intensity of transmitted
light
E
0
~
1
tgβ
[8-15]. It should be noted that during ion bombardment, regardless of the
ion dose, the value of h at which K decreases to approximately zero does not change
and lies within 1.1 – 1.15 eV, i.e. during amorphization, the band gap does not decrease.
Our further studies showed that Еg for an amorphized Si layer is ~1.2 eV.
This, in this work, comparative studies of the effect of bombardment with Ar+
and Ni
+
ions on the composition, structure, and light transmission coefficient of single-
crystal Si were carried out. In both cases, implantation leads to disordering of the
surface layers and a decrease in K. After heating at T = 900 K of Si implanted with Ni
+
ions, epitaxial phases are formed in the surface region of Si, depending on the dose of
ions (at D < 510
15
cm
-2
) and films (at D = 610
16
cm
-2
) NiSi
2
. The thickness of the
amorphized layers, the degree of surface disorder, and the degree of surface coverage
by amorphized Si (111) phases bombarded by low-energy ions (E
0
= 0.5 – 2 keV) were
determined for the first time.
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